Richard Kenneth Oxland

This inventor holds 29 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Kenneth Oxland. Retrieved from https://idiyas.com/inventor/richard-kenneth-oxland

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 (Patent Applications = 1)

% Patents Active = 65.5

Average Co-Inventor Count = 1.8

ph-index = 6

Forward Citations = 1,362(Granted Patents)

Location History:

Leuven, BE (2014 - 2017)
Brussels, BE (2015 - 2020)

Company Filing History:

29 out of 42,926

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2020

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Areas of Expertise:

FinFET

Nanowire Transistor

Heterostructures

CMOS

III-V Compound Semiconductor

Planarization

Dopant Layer

Device Fabrication

Transistors

Epitaxial Layer

Replacement Gate

Barrier Layer

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10861933 - Elongated semiconductor structure planarization (2020-12-08),

2. 10522621 - Nanowire field effect transistor device having a replacement gate (2019-12-31),

3. 10510853 - FinFET with two fins on STI (2019-12-17),

4. 10276660 - Nanowire field effect transistor having a metal gate surrounding semiconductor nanowire (2019-04-30),

5. 10164031 - FinFET with two fins on STI (2018-12-25),

6. 10164024 - Heterostructures for semiconductor devices and methods of forming the same (2018-12-25),

7. 10121858 - Elongated semiconductor structure planarization (2018-11-06),

8. 10049946 - Vertical CMOS structure and method (2018-08-14),

9. 9911599 - Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer (2018-03-06),

10. 9887272 - Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer (2018-02-06),

11. 9768263 - Semiconductor devices and FinFET devices (2017-09-19),

12. 9685514 - III-V compound semiconductor device having dopant layer and method of making the same (2017-06-20),

13. 9680027 - Nickelide source/drain structures for CMOS transistors (2017-06-13),

14. 9590084 - Graded heterojunction nanowire device (2017-03-07),

15. 9502541 - Forming fins on the sidewalls of a sacrificial fin to form a FinFET (2016-11-22),

Title: Richard Kenneth Oxland - Innovative Inventor from Brussels

Introduction: Richard Kenneth Oxland is a renowned inventor based in Brussels, Belgium, known for his groundbreaking contributions to various fields of technology and science.

Latest Patents: Richard Kenneth Oxland holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Richard Kenneth Oxland has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Throughout his career, Richard Kenneth Oxland has collaborated with top companies, innovative startups, and talented individuals to bring his inventions to life and make a lasting impact on society.

Conclusion: Richard Kenneth Oxland's passion for innovation and dedication to pushing the boundaries of what is possible have solidified his reputation as a visionary inventor in the global innovation landscape.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: