The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Apr. 13, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Martin Christopher Holland, Bertem, BE;
Matthias Passlack, Huldenberg, BE;
Richard Kenneth Oxland, Brussels, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A fin field effect transistor (FinFET) device includes a substrate and a template material over the substrate. The template material absorbs lattice mismatches with the substrate. The FinFET device also includes a barrier material over the template material. The barrier material is free of point defects. The FinFET device further includes a channel material over the barrier material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile