The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Oct. 30, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Richard Kenneth Oxland, Brussels, BE;

Blandine Duriez, Brussels, BE;

Mark van Dal, Linden, BE;

Martin Christopher Holland, Bertem, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/321 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0688 (2013.01); H01L 29/66545 (2013.01); H01L 29/7827 (2013.01);
Abstract

According to one example, a method includes epitaxially growing first portions of a plurality of elongated semiconductor structures on a semiconductor substrate, the elongated semiconductor structures running perpendicular to the substrate. The method further includes forming a gate layer on the substrate, the gate layer contacting the elongated semiconductor structures. The method further includes performing a planarization process on the gate layer and the elongated semiconductor structures, and epitaxially growing second portions of the plurality of elongated semiconductor structures, the second portions comprising a different material than the first portions.


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