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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9911599 B1

PDFFull Text
Date of Patent:
Mar. 06, 2018

Filed:

Oct. 06, 2016

Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventor:

Richard Kenneth Oxland, Brussels, BE;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Michael Jung

Int. Cl.
CPC ...
F01L 21/02 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 21/285 (2006.01); H01L 29/165 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0245 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02532 (2013.01); H01L 21/28575 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/1079 (2013.01); H01L 29/16 (2013.01); H01L 29/165 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/495 (2013.01); H01L 29/51 (2013.01); H01L 29/66439 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 27/1211 (2013.01); H01L 29/41791 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A device includes a substrate, a buffer layer, a nanowire, a gate structure, and a remnant of a sacrificial layer. The buffer layer is above the substrate. The nanowire is above the buffer layer and includes a pair of source/drain regions and a channel region between the source/drain regions. The gate structure surrounds the channel region. The remnant of the sacrificial layer is between the buffer layer and the nanowire and includes a group III-V semiconductor material.

Find Patent Forward Citations

Oxland, Richard. (2018). Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer (U.S. Patent No. 9911599). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9911599

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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