The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Mar. 29, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Richard Kenneth Oxland, Brussels, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 21/762 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/165 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/16 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0669 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02532 (2013.01); H01L 21/28575 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/1079 (2013.01); H01L 29/16 (2013.01); H01L 29/165 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/495 (2013.01); H01L 29/51 (2013.01); H01L 29/66439 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/66606 (2013.01); H01L 29/66742 (2013.01); H01L 29/66871 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 27/1211 (2013.01); H01L 29/0886 (2013.01); H01L 29/41791 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A device includes a substrate, a buffer layer, a nanowire, a gate structure, and a remnant of a sacrificial layer. The buffer layer is above the substrate. The nanowire is above the buffer layer and includes a pair of source/drain regions and a channel region between the source/drain regions. The gate structure surrounds the channel region. The remnant of the sacrificial layer is between the buffer layer and the nanowire and includes a group III-V semiconductor material.