The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Nov. 26, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Richard Kenneth Oxland, Brussels, BE;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/775 (2006.01); H01L 29/161 (2006.01); H01L 29/201 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 29/161 (2013.01); H01L 29/201 (2013.01); H01L 29/0676 (2013.01); H01L 29/456 (2013.01);
Abstract
A device includes a source region, a drain region, and a semiconductor channel connecting the source region to the drain region. The semiconductor channel includes a source-side channel portion adjoining the source region, wherein the source-side channel portion has a first bandgap, and a drain-side channel portion adjoining the drain region. The drain-side channel portion has a second bandgap different from the first bandgap.