Richard Farrell

USPTO Granted Patents = 24 (Patent Applications = 1)

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 41(Granted Patents)

Location History:

Seattle, WA (US) (2021)
Albany, NY (US) (2014 - 2023)
Nassau, NY (US) (2018 - 2023)

Company Filing History:

Tokyo Electron Limited

patents

Years Active: 2014-2025

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24 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12216400 - Directed self-assembly (2025-02-04),

2. 11841617 - Method of forming a narrow trench (2023-12-12),

3. 11676817 - Method for pitch split patterning using sidewall image transfer (2023-06-13),

4. 11567407 - Method for globally adjusting spacer critical dimension using photo-active self-assembled monolayer (2023-01-31),

5. 11398379 - Platform and method of operating for integrated end-to-end self-aligned multi-patterning process (2022-07-26),

6. 11043378 - Systems and methods for inhibiting detectivity, metal particle contamination, and film growth on wafers (2021-06-22),

7. 10978307 - Deposition process (2021-04-13),

8. 10727057 - Platform and method of operating for integrated end-to-end self-aligned multi-patterning process (2020-07-28),

9. 10685847 - Vertical nanowires formed on upper fin surface (2020-06-16),

10. 10319637 - Method for fully self-aligned via formation using a directed self assembly (DSA) process (2019-06-11),

11. 10186577 - Multiple directed self-assembly material mask patterning for forming vertical nanowires (2019-01-22),

12. 10141183 - Methods of spin-on deposition of metal oxides (2018-11-27),

13. 9865682 - Directed self-assembly material etch mask for forming vertical nanowires (2018-01-09),

14. 9698025 - Directed self-assembly material growth mask for forming vertical nanowires (2017-07-04),

15. 9613807 - Methods for fabricating integrated circuits using directed self-assembly chemoepitaxy (2017-04-04),

Title: Richard Farrell: Innovator in Directed Self-Assembly and Patterning Techniques

Introduction

Richard Farrell, based in Albany, NY, is a prolific inventor with an impressive portfolio of 24 patents. His work significantly contributes to the fields of material science and semiconductor manufacturing. Farrell’s innovative approaches are shaping the future of device fabrication, paving the way for advancements in technology.

Latest Patents

Two of Richard Farrell's latest patents exemplify his cutting-edge work. The first patent, titled "Directed Self-Assembly," details a method for forming a device by blending two different block copolymers within a mixer in a fabrication facility. This intricate process involves creating a first mixture and coating a substrate to develop precise materials for advanced applications.

The second patent, "Method of Forming a Narrow Trench," outlines a procedure for patterning a substrate by adding a grafting material onto side surfaces of a pre-patterned structure. This innovation allows for the diffusion of solubility-shifting materials, which alters the solubility of neighboring structures in a developer, ultimately enabling the formation of complex patterns with high precision.

Career Highlights

Throughout his career, Richard Farrell has made significant contributions while working for prominent companies such as GlobalFoundries Inc. and Tokyo Electron Limited. His expertise in semiconductor technologies has been instrumental in advancing fabrication techniques and material processes.

Collaborations

Richard has collaborated with notable professionals, including Gerard M. Schmid and Ji Xu. These partnerships have further strengthened research and development efforts in innovative device fabrication and have led to the successful implementation of new methods in the industry.

Conclusion

Richard Farrell stands out as a leading inventor in the realm of directed self-assembly and patterning techniques. With a rich history of patents and collaborations, he continues to influence the semiconductor industry with his innovative solutions. His work exemplifies the intersection of creativity and technology, driving forward significant advancements in material sciences and device fabrication.

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