The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jan. 26, 2017
Tokyo Electron Limited, Tokyo, JP;
Nihar Mohanty, Clifton Park, NY (US);
Lior Huli, Delmar, NY (US);
Jeffrey Smith, Clifton Park, NY (US);
Richard Farrell, Nassau, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Techniques herein provide methods for depositing spin-on metal materials for creating metal hard mask (MHM) structures without voids in the deposition. This includes effective spin-on deposition of TiOx, ZrOx, SnOx, HFOx, TaOx, et cetera. Such materials can help to provide differentiation of material etch resistivity for differentiation. By enabling spin-on metal hard mask (MHM) for use with a multi-line layer, a slit-based or self-aligned blocking strategy can be effectively used. Techniques herein include identifying a fill material to fill particular openings in a given relief pattern, modifying a surface energy value of surfaces within the opening such that a contact angle value of an interface between the fill material in liquid form and the sidewall or floor surfaces enables gap-free or void-free filling.