The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Jun. 30, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akiteru Ko, Albany, NY (US);

Richard Farrell, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/2041 (2013.01); G03F 7/26 (2013.01); H01L 21/0275 (2013.01); H01L 21/0276 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01);
Abstract

A method of forming a device includes forming a hard mask layer over an underlying layer of a substrate, forming an anti-reflective coating layer over the hard mask layer, forming a patterned resist layer over the anti-reflective coating layer, and forming a mandrel including the anti-reflective coating layer by patterning the anti-reflective coating layer using the patterned resist layer as an etch mask. The method includes forming a sidewall spacer on the mandrel including the anti-reflective coating layer, forming a freestanding spacer on the hard mask layer by removing the mandrel from the anti-reflective coating layer, and using the freestanding spacer as an etch mask, patterning the underlying layer of the substrate.


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