The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Sep. 04, 2014
Globalfoundries Inc., Grand Cayman, KY;
Steven Bentley, Watervliet, NY (US);
Richard A. Farrell, Albany, NY (US);
Gerard Schmid, Rensselaer, NY (US);
Ajey Poovannummoottil Jacob, Watervliet, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes forming at least one fin on a semiconductor substrate. A nanowire material is formed above the fin. A hard mask layer is formed above the fin. A first directed self-assembly material is formed above the hard mask layer. The hard mask layer is patterned using a portion of the first directed self-assembly material as an etch mask to expose a portion of the nanowire material. The nanowire material is etched using the hard mask layer as an etch mask to define a substantially vertical nanowire on a top surface of the at least one fin, wherein at least one dimension of the substantially vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material.