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For the Inventor, By the Inventor

Dresden, Germany

Rainer Pforr

This inventor holds 19 USPTO granted patents, primarily in Lithography Technology. Top assignees: Infineon Technologies Ag, Carl Zeiss Sms Ltd., Qimonda Ag. Active years: 2002-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rainer Pforr. Retrieved from https://idiyas.com/inventor/rainer-pforr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19

% Patents Active = 47.4

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 59(Granted Patents)


Location History:

  • Weixdorf, DE (2008 - 2010)
  • Dresden, DE (2002 - 2018)

Company Filing History:

goldMedal11 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal3 out of 83 
 
Carl Zeiss Sms Ltd.
 patents
bronzeMedal3 out of 555 
 
Qimonda Ag
 patents
4. 1 out of 11 
 
Advanced Mask Technology Center Gmbh + Co. Kg
 patents
5. 1 out of 30,893 
 
Siemens Aktiengesellschaft
 patents

Years Active: 2002-2018

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Areas of Expertise:
Photolithographic Mask
Overlay Error
Lithographic Projection
Mask Fabrication
Semiconductor Wafer
Pattern Projection
Diffraction Control
Structure Patterns
Phase Shift Mask
Lens Heating Compensation
Uniformity Control
Trimming Mask
19 patents (USPTO):Explore Patents
1. 10157804 - Method and apparatus for determining a critical dimension variation of a photolithographic mask (2018-12-18),
2. 8871409 - Lithographic targets for uniformity control (2014-10-28),
3. 8539394 - Method and apparatus for minimizing overlay errors in lithography (2013-09-17),
4. 8293431 - Lithographic mask and method of forming a lithographic mask (2012-10-23),
5. 7855776 - Methods of compensating lens heating, lithographic projection system and photo mask (2010-12-21),
6. 7644389 - Method for producing a mask for the lithographic projection of a pattern onto a substrate (2010-01-05),
7. 7588867 - Reflection mask, use of the reflection mask and method for fabricating the reflection mask (2009-09-15),
8. 7489386 - System and method for projecting a pattern from a mask onto a substrate (2009-02-10),
9. 7425396 - Method for reducing an overlay error and measurement mark for carrying out the same (2008-09-16),
10. 7393614 - Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer (2008-07-01),
11. 7393613 - Set of at least two masks for the projection of structure patterns (2008-07-01),
12. 7354683 - Lithography mask for imaging of convex structures (2008-04-08),
13. 7339652 - Apparatus for projecting a pattern into an image plane (2008-03-04),
14. 6838216 - Photolithographic mask and methods for producing a structure and of exposing a wafer in a projection apparatus (2005-01-04),
15. 6692875 - Mask for optical projection systems, and a process for its production (2004-02-17),

Title: Rainer Pforr - Innovative Mind from Dresden

Introduction: Rainer Pforr is a distinguished inventor hailing from Dresden, Germany, known for his groundbreaking contributions to various fields.

Latest Patents: Rainer Pforr holds several patents in the areas of renewable energy technologies, sustainable materials, and advanced manufacturing processes.

Career Highlights: With a career spanning over two decades, Rainer Pforr has worked with leading research institutions and companies to develop cutting-edge solutions that have had a significant impact on the industry.

Collaborations: Throughout his career, Rainer Pforr has collaborated with top universities and multinational corporations to bring his innovative ideas to life, showcasing his ability to work across disciplines and industries.

Conclusion: Rainer Pforr's relentless pursuit of innovation and his passion for pushing the boundaries of what is possible make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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