The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Jul. 25, 2011
Applicants:

Rainer Pforr, Dresden, DE;

Guy Ben-zvi, Shechania, IL;

Vladimir Dmitriev, Karmiel, IL;

Erez Graitzer, Gilon, IL;

Inventors:

Rainer Pforr, Dresden, DE;

Guy Ben-Zvi, Shechania, IL;

Vladimir Dmitriev, Karmiel, IL;

Erez Graitzer, Gilon, IL;

Assignee:

Carl Zeiss SMS Ltd., Karmiel, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2012.01); G03C 5/00 (2006.01); G03F 7/00 (2006.01); H01L 21/66 (2006.01); H01L 21/68 (2006.01); G03F 1/38 (2012.01); G03F 1/44 (2012.01); G03F 7/20 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/68 (2013.01); H01L 21/681 (2013.01); H01L 22/20 (2013.01); H01L 21/682 (2013.01); G03F 1/38 (2013.01); G03F 1/44 (2013.01); G03F 7/70616 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G03F 7/70683 (2013.01); G06F 17/50 (2013.01);
Abstract

A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.


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