The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Sep. 30, 2004
Stefan Gruss, Dresden, DE;
Detlef Hofmann, Dresden, DE;
Rainer Pforr, Weixdorf, DE;
Mario Hennig, Dresden, DE;
Guido Thielscher, Dresden, DE;
Hans-georg Froehlich, Dresden, DE;
Stefan Gruss, Dresden, DE;
Detlef Hofmann, Dresden, DE;
Rainer Pforr, Weixdorf, DE;
Mario Hennig, Dresden, DE;
Guido Thielscher, Dresden, DE;
Hans-Georg Froehlich, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.