The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jul. 20, 2012
Applicant:

Rainer Pforr, Dresden, DE;

Inventor:

Rainer Pforr, Dresden, DE;

Assignee:

Carl Zeiss SMS Ltd., Misgav, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/84 (2012.01); G03F 7/20 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/24 (2013.01); G03F 1/84 (2013.01); G03F 7/70625 (2013.01);
Abstract

The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.


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