The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2008

Filed:

Mar. 05, 2004
Applicants:

Roderick Köhle, Ottobrunn, DE;

Rainer Pforr, Weixdorf, DE;

Jörg Thiele, München, DE;

Wolfgang Dettmann, München, DE;

Markus Hofsäss, München, DE;

Mario Hennig, Dresden, DE;

Inventors:

Roderick Köhle, Ottobrunn, DE;

Rainer Pforr, Weixdorf, DE;

Jörg Thiele, München, DE;

Wolfgang Dettmann, München, DE;

Markus Hofsäss, München, DE;

Mario Hennig, Dresden, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03F 1/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.


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