IDiyas

For the Inventor, By the Inventor

Hsinchu, Taiwan

Pu-Fang Chen

USPTO Granted Patents = 18 

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 25(Granted Patents)


Company Filing History:

goldMedal18 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2009-2025

Loading Chart...
18 patents (USPTO):
1. 12387943 - Structure for embedded gettering in a silicon on insulator wafer (2025-08-12),
2. 12046614 - Apparatus and methods for effective impurity gettering (2024-07-23),
3. 12040221 - Fabrication method of metal-free SOI wafer (2024-07-16),
4. 11508670 - Semiconductor structure and method for manufacturing the same (2022-11-22),
5. 11232974 - Fabrication method of metal-free SOI wafer (2022-01-25),
6. 11211259 - Structure and method for embedded gettering in a silicon on insulator wafer (2021-12-28),
7. 10714433 - Semiconductor structure and method for manufacturing the same (2020-07-14),
8. 10190235 - Wafer supporting structure and method for forming the same (2019-01-29),
9. 10170312 - Semiconductor substrate and manufacturing method of the same (2019-01-01),
10. 10157819 - Semiconductor device and manufacturing method thereof (2018-12-18),
11. 10141413 - Wafer strength by control of uniformity of edge bulk micro defects (2018-11-27),
12. 9945048 - Semiconductor structure and method (2018-04-17),
13. 9899297 - Semiconductor device having a through-silicon via and manufacturing method thereof (2018-02-20),
14. 9064823 - Method for qualifying a semiconductor wafer for subsequent processing (2015-06-23),
15. 8932945 - Wafer alignment system and method (2015-01-13),

Title: Innovator Profile: Pu-Fang Chen

Introduction

Pu-Fang Chen is an esteemed inventor based in Hsinchu, Taiwan. With an impressive portfolio of 18 patents, he has made significant contributions to the field of semiconductor manufacturing. His work primarily focuses on innovative methods and structures that enhance the quality and efficiency of silicon-on-insulator (SOI) substrates.

Latest Patents

Among Pu-Fang Chen's notable inventions are two of his latest patents. The first patent, titled "Structure for Embedded Gettering in a Silicon on Insulator Wafer," describes a comprehensive method for manufacturing a silicon-on-insulator substrate. This involves several steps, such as depositing an etch stop layer on a dummy wafer, growing an epitaxial silicon layer on this layer, and bonding a buried oxide layer to the gettering layer. The result is a highly efficient SOI substrate that benefits from a structured gettering layer designed to improve overall performance.

The second patent is focused on "Apparatus and Methods for Effective Impurity Gettering." This invention details a device consisting of a substrate that contains a pixel region and an isolation region. The innovation introduces a heterogeneous layer that incorporates different semiconductor materials, specifically tailored to enhance the isolation of pixel areas by utilizing variations in lattice constants.

Career Highlights

Pu-Fang Chen currently works for Taiwan Semiconductor Manufacturing Company Limited, one of the leading companies in the semiconductor manufacturing industry. His role allows him to contribute to cutting-edge technologies and processes that drive advancements in the field. His commitment to innovation has positioned him as a key figure in semiconductor research and development.

Collaborations

Throughout his career, Pu-Fang Chen has collaborated with several esteemed colleagues, including Victor Y. Lu and Shi-Chieh Lin. These partnerships have fostered a collaborative environment that enhances creativity and drives significant breakthroughs in semiconductor technology.

Conclusion

Pu-Fang Chen's contributions to the world of semiconductor manufacturing are notable and impactful. With his 18 patents reflecting his innovative prowess, he is set to continue influencing the industry and driving further advancements in semiconductor technology. His collaborations with other talented individuals only serve to amplify his potential for further innovations in the future.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…