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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9945048 B1

PDFFull Text
Date of Patent:
Apr. 17, 2018

Filed:

Jun. 15, 2012

Semiconductor structure and method

Applicants:

Sen-hong Syue, Hsin-Chu, TW;

Pu-fang Chen, Hsin-Chu, TW;

Shiang-bau Wang, Pingzchen, TW;

Inventors:

Sen-Hong Syue, Hsin-Chu, TW;

Pu-Fang Chen, Hsin-Chu, TW;

Shiang-Bau Wang, Pingzchen, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Sophia Nguyen

Int. Cl.
CPC ...
C30B 15/04 (2006.01); H01L 21/02 (2006.01); C30B 15/20 (2006.01); C30B 31/02 (2006.01); C30B 31/04 (2006.01); H01L 21/311 (2006.01); C30B 15/22 (2006.01); H01L 29/36 (2006.01); H01L 21/762 (2006.01); C30B 31/16 (2006.01); H01L 21/3105 (2006.01); C30B 29/06 (2006.01); H01L 21/322 (2006.01); C30B 15/00 (2006.01); C30B 33/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 15/203 (2013.01); C30B 15/206 (2013.01); C30B 15/22 (2013.01); C30B 29/06 (2013.01); C30B 31/02 (2013.01); C30B 31/04 (2013.01); C30B 31/165 (2013.01); H01L 21/0201 (2013.01); H01L 21/311 (2013.01); H01L 21/31053 (2013.01); H01L 21/3225 (2013.01); H01L 21/76224 (2013.01); H01L 29/365 (2013.01); C30B 15/00 (2013.01); C30B 33/00 (2013.01); H01L 29/78 (2013.01);
Abstract

A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

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