The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
May. 24, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
An-Li Ho, Hsin-Chu, TW;
Chi-En Huang, Kaohsiung, TW;
Yi Jia Chen, New Taipei, TW;
Pu-Fang Chen, Hsin-Chu, TW;
Cary Chia-Chung Lo, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B65D 85/00 (2006.01); C30B 33/00 (2006.01); C30B 29/06 (2006.01); H01L 21/677 (2006.01); C30B 13/00 (2006.01);
U.S. Cl.
CPC ...
C30B 33/00 (2013.01); C30B 29/06 (2013.01); H01L 21/67706 (2013.01); H01L 21/67709 (2013.01); C30B 13/00 (2013.01); Y10T 117/1076 (2015.01);
Abstract
A method for forming a wafer supporting structure comprises growing a single crystal using a floating zone crystal growth process, forming a silicon ingot having an oxygen concentration equal to or less than 1 parts-per-million-atomic (ppma), slicing a wafer from the silicon ingot, cutting portions of the wafer to form a supporting structure through a mechanical lathe and applying a high temperature anneal process to the supporting structure.