The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

May. 08, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

I-Che Huang, Hsinchu, TW;

Pu-Fang Chen, Hsinchu, TW;

Ting-Chun Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 21/322 (2006.01); C30B 15/00 (2006.01); C03B 15/14 (2006.01); C30B 23/00 (2006.01); H01L 21/66 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3225 (2013.01); C30B 29/06 (2013.01); H01L 2924/0002 (2013.01); H01L 22/12 (2013.01);
Abstract

A method is provided for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations are defined about a periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and a density of bulk micro defects present, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from subsequent processing when the statistical profile deviates from the predetermined range. As such, wafers prone to distortion, warpage, and breakage are rejected from subsequent thermal processing.


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