The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Aug. 20, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yueh-Chuan Lee, Hsinchu, TW;
Shih-Hsien Huang, Hsin-Chu, TW;
Chia-Chan Chen, Zhubei, TW;
Pu-Fang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Apparatus and methods for effective impurity gettering are described herein. In some embodiments, a described device includes: a substrate; a pixel region disposed in the substrate; an isolation region disposed in the substrate and within a proximity of the pixel region; and a heterogeneous layer on the seed area. The isolation region comprises a seed area including a first semiconductor material. The heterogeneous layer comprises a second semiconductor material that has a lattice constant different from that of the first semiconductor material.