Ming-Ren Lin

This inventor holds 98 USPTO granted patents and 3 EPO patents, primarily in FinFET Technology (CPC class H01L2-1336). Top assignees: Advanced Micro Devices Corporation, Globalfoundries Inc., Spansion LLC.. Active years: 1997-2013.

USPTO Granted Patents = 98

% Patents Active = 84.7

EPO Patents = 3 (Patent Applications = 1)

Average Co-Inventor Count = 2.5

ph-index = 28

Forward Citations = 2,840(Granted Patents)

Forward Citations (Not Self Cited) = 2,827(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Capertino, CA (US) (2001)
Cupertio, CA (US) (2000 - 2003)
Cupertino, CA (US) (1997 - 2013)

Company Filing History:

93 out of 13,146

Advanced Micro Devices Corporation

Years Active: 1997-2013

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Areas of Expertise:

FinFET Devices

MOSFET Technology

Silicon On Insulator

Shallow Trench Isolation

Integrated Circuits

Doped Structures

High-K Dielectric

Transistor Gates

Thermal Management

Metal-Induced Crystallization

Dual-Metal CMOS

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98 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8580660 - Double and triple gate MOSFET devices and methods for making same (2013-11-12),

2. 8502283 - Strained fully depleted silicon on insulator semiconductor device (2013-08-06),

3. 8431466 - Method of forming finned semiconductor devices with trench isolation (2013-04-30),

4. 8222680 - Double and triple gate MOSFET devices and methods for making same (2012-07-17),

5. 8008136 - Fully silicided gate structure for FinFET devices (2011-08-30),

6. 7994020 - Method of forming finned semiconductor devices with trench isolation (2011-08-09),

7. 7871873 - Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material (2011-01-18),

8. 7713834 - Method of forming isolation regions for integrated circuits (2010-05-11),

9. 7648886 - Shallow trench isolation process (2010-01-19),

10. 7541267 - Reversed T-shaped finfet (2009-06-02),

11. 7498225 - Systems and methods for forming multiple fin structures using metal-induced-crystallization (2009-03-03),

12. 7422961 - Method of forming isolation regions for integrated circuits (2008-09-09),

13. 7416925 - Doped structure for finfet devices (2008-08-26),

14. 7329582 - Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive material (2008-02-12),

15. 7306997 - Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor (2007-12-11),

Ming-Ren Lin: Innovator in Semiconductor Technology

Introduction

Ming-Ren Lin, based in Cupertino, CA, has made significant contributions to the field of semiconductor technology with an impressive portfolio of 98 patents. His work primarily focuses on the advancement of metal-oxide semiconductor field-effect transistors (MOSFETs), essential components in modern electronic devices.

Latest Patents

Among his latest innovations, Ming-Ren has developed cutting-edge MOSFET devices. One notable patent describes a double gate MOSFET that includes a fin with a first gate positioned on top and a second gate surrounding it. Additionally, he has a patent for a triple gate MOSFET featuring three gates positioned around a fin, reflecting his innovative approach to enhancing transistor performance. Another significant patent involves a strained fully depleted silicon on insulator semiconductor device, which introduces strain to optimize the semiconductor layer’s functionality.

Career Highlights

Ming-Ren Lin has built his career at leading technology firms, notably at Advanced Micro Devices Corporation and Globalfoundries Inc. His work at these companies has fostered numerous advancements in semiconductor technology, contributing to the industry’s evolution.

Collaborations

Throughout his career, Ming-Ren has collaborated with prominent individuals in his field, including colleagues Qi Xiang and Bin Yu. Their joint efforts have propelled their projects to new heights, showcasing the power of teamwork in the pursuit of innovation.

Conclusion

Ming-Ren Lin's extensive experience and his impressive collection of patents demonstrate his profound impact on the semiconductor industry. His innovations continue to pave the way for advancements in technology, affirming his status as a leading inventor in the field.