The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jun. 20, 2007
Applicants:
Haihong Wang, Milpitas, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Ming-ren Lin, Cupertino, CA (US);
Bin Yu, Cupertino, CA (US);
Inventors:
Haihong Wang, Milpitas, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Ming-Ren Lin, Cupertino, CA (US);
Bin Yu, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method includes forming a first rectangular mesa from a layer of semiconducting material and forming a first dielectric layer around the first mesa. The method further includes forming a first rectangular mask over a first portion of the first mesa leaving an exposed second portion of the first mesa and etching the exposed second portion of the first mesa to produce a reversed T-shaped fin from the first mesa.