The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jul. 05, 2006
Haihong Wang, Milpitas, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Ming-ren Lin, Cupertino, CA (US);
Bin Yu, Cupertino, CA (US);
Haihong Wang, Milpitas, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Ming-Ren Lin, Cupertino, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for forming fin structures for a semiconductor device that includes a substrate and a dielectric layer formed on the substrate is provided. The method includes etching the dielectric layer to form a first structure, depositing an amorphous silicon layer over the first structure, and etching the amorphous silicon layer to form second and third fin structures adjacent first and second side surfaces of the first structure. The second and third fin structures may include amorphous silicon material. The method further includes depositing a metal layer on upper surfaces of the second and third fin structures, performing a metal-induced crystallization operation to convert the amorphous silicon material of the second and third fin structures to a crystalline silicon material, and removing the first structure.