The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Jun. 15, 2005
James Pan, Fishkill, NY (US);
Jonathan Byron Smith, Poughkeepsie, NY (US);
Ming-ren Lin, Cupertino, CA (US);
James Pan, Fishkill, NY (US);
Jonathan Byron Smith, Poughkeepsie, NY (US);
Ming-Ren Lin, Cupertino, CA (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
Methods are provided for fabricating a semiconductor device having an impurity doped region in a silicon substrate. The method comprises forming a metal silicide layer electrically contacting the impurity doped region and depositing a conductive layer overlying and electrically contacting the metal silicide layer. A dielectric layer is deposited overlying the conductive layer and an opening is etched through the dielectric layer to expose a portion of the conductive layer. A conductive material is selectively deposited to fill the opening and to electrically contact the impurity doped region.