The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jun. 14, 2012
Ming-ren Lin, Cupertino, CA (US);
Judy Xilin an, San Jose, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Ming-Ren Lin, Cupertino, CA (US);
Judy Xilin An, San Jose, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.