The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Apr. 20, 2006
Applicants:
Ming-ren Lin, Cupertino, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Inventors:
Ming-Ren Lin, Cupertino, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.