IDiyas

For the Inventor, By the Inventor

Yunlin, Taiwan

Miao-Cheng Liao

USPTO Granted Patents = 14 

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 30(Granted Patents)


Location History:

  • Hsinchu, TW (2004)
  • Yunlin Hsien, TW (2007)
  • Cihtong Township, Yunlin County, TW (2007)
  • Tsztung Shiang, TW (2013 - 2015)
  • Yunlin, TW (2002 - 2017)

Company Filing History:

goldMedal14 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2002-2017

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14 patents (USPTO):
1. 9607946 - Reverse damascene process (2017-03-28),
2. 9536834 - Reverse damascene process (2017-01-03),
3. 9502280 - Two-step shallow trench isolation (STI) process (2016-11-22),
4. 9379275 - Apparatus and method for reducing dark current in image sensors (2016-06-28),
5. 9214514 - Mechanisms for forming semiconductor device having stable dislocation profile (2015-12-15),
6. 9006070 - Two-step shallow trench isolation (STI) process (2015-04-14),
7. 8692299 - Two-step shallow trench isolation (STI) process (2014-04-08),
8. 8518818 - Reverse damascene process (2013-08-27),
9. 8455883 - Stressed semiconductor device and method of manufacturing (2013-06-04),
10. 7969708 - Alpha tantalum capacitor plate (2011-06-28),
11. 7253121 - Method for forming IMD films (2007-08-07),
12. 7205634 - MIM structure and fabrication process with improved capacitance reliability (2007-04-17),
13. 6776850 - Preventative maintenance aided tool for CVD chamber (2004-08-17),
14. 6483082 - Heater lift lead screw for vertical furnaces (2002-11-19),

Miao-Cheng Liao: Innovator in Semiconductor Technology

Introduction

Miao-Cheng Liao is a prominent inventor based in Yunlin, Taiwan, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 14 patents, Liao has made strides in advancing methods related to metallization layers in semiconductor manufacturing.

Latest Patents

Among his latest patents is the innovative reverse damascene process, which plays a crucial role in forming back-end-of-the-line metallization layers. This method involves creating a series of freestanding metal layer structures on a semiconductor substrate defined by a patterned photoresist layer. A diffusion barrier layer is then carefully deposited to conform to the structure, ensuring its integrity. Finally, a dielectric material is introduced to fill the spaces between the metal layers, after which the substrate is planarized to remove excess material and reveal the top of the metal layer.

Career Highlights

Liao's work at Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has positioned him at the forefront of innovation in the semiconductor industry. His patents reflect his deep knowledge and technical expertise in the intricate processes that underpin modern chip manufacturing.

Collaborations

Throughout his career, Miao-Cheng Liao has collaborated with other talented professionals, including Min Hao Hong and You-Hua Chou. These partnerships highlight the importance of teamwork and shared knowledge in driving technological advancements in the field.

Conclusion

Miao-Cheng Liao’s contributions to semiconductor technology, particularly through his innovative patent work, have made a lasting impact on the industry. As technology continues to evolve, inventors like Liao will remain vital in shaping the future of electronics and manufacturing processes.

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