The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Nov. 14, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Min-Hao Hong, Kaohsiung, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chih-Tsung Lee, Hsinchu, TW;
Miao-Cheng Liao, Tsztung Shiang, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/70 (2006.01); H01L 21/8238 (2006.01); H01L 27/085 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract
Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.