The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Aug. 24, 2012
Min Hao Hong, Kaohsiung, TW;
You-hua Chou, Hsin-Chu, TW;
Chih-tsung Lee, Hsin-Chu, TW;
Shiu-ko Jangjian, Tainan, TW;
Miao-cheng Liao, Yunlin, TW;
Hsiang Hsiang Ko, Sinying, TW;
Chen-ming Huang, Hsinchu, TW;
Min Hao Hong, Kaohsiung, TW;
You-Hua Chou, Hsin-Chu, TW;
Chih-Tsung Lee, Hsin-Chu, TW;
Shiu-Ko JangJian, Tainan, TW;
Miao-Cheng Liao, Yunlin, TW;
Hsiang Hsiang Ko, Sinying, TW;
Chen-Ming Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.