The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
May. 19, 2011
Miao-cheng Liao, Tsztung Shiang, TW;
Min Hao Hong, Kaohsiung, TW;
Hsiang Hsiang Ko, Sinying, TW;
Kei-wei Chen, Tainan, TW;
Ying-lang Wang, Tai-Chung County, TW;
Miao-Cheng Liao, Tsztung Shiang, TW;
Min Hao Hong, Kaohsiung, TW;
Hsiang Hsiang Ko, Sinying, TW;
Kei-Wei Chen, Tainan, TW;
Ying-Lang Wang, Tai-Chung County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.