The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Aug. 15, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
You-Hua Chou, Taipei, TW;
Min Hao Hong, Kaohsiung, TW;
Jian-Shin Tsai, Tainan, TW;
Miao-Cheng Liao, Yunlin, TW;
Hsiang Hsiang Ko, Tainan County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.