Tainan, Taiwan

Jian-Shin Tsai

This inventor holds 20 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Manufacturing. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jian-Shin Tsai. Retrieved from https://idiyas.com/inventor/jian-shin-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 85.0

Average Co-Inventor Count = 6.8

ph-index = 3

Forward Citations = 34(Granted Patents)


Location History:

  • Taiching County, TW (2008)
  • Tainan, TW (2013 - 2021)

Company Filing History:


Years Active: 2008-2026

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Areas of Expertise:
Capacitor Structure
Conductive Structures
Image Sensor
Semiconductor Device
Memory Cell
Fabrication Method
Barrier Layer
Reverse Damascene Process
Plasma Treatment
Stacked Semiconductor
Metal Shielding Layer
Etch Stop Layer
20 patents (USPTO):Explore Patents

Title: Jian-Shin Tsai: Innovator in Semiconductor Technology

Introduction: Jian-Shin Tsai is a prominent inventor based in Tainan, Taiwan, renowned for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 19 patents, Tsai has played a vital role in advancing the capabilities and efficiency of semiconductor devices.

Latest Patents: Among his latest innovations, Tsai has developed methods for fabricating conductive structures aimed at preventing metal extrusion. This method involves creating a control layer that reduces the grain size of a metal-containing layer, resulting in a robust structure that minimizes extrusion defects. An integral aspect of this design is the formation of the control layer, which can be achieved by introducing a control element, such as oxygen, between a barrier layer and the conductive feature.

Another of his recent patents pertains to the manufacturing of semiconductor image sensor devices. This patented method describes the formation of radiation-sensing doped regions within a substrate, as well as the creation of an isolation structure using a SiOCN layer. This layer is filled in a trench formed between the doped regions through a plasma-enhanced atomic layer deposition method, utilizing Bis(tertiary-butylamino)silane (BTBAS) alongside a gas mixture that includes NO, N, and O.

Career Highlights: Tsai's career has been marked by his position at Taiwan Semiconductor Manufacturing Company Ltd., where he has worked closely on groundbreaking technologies that enhance the performance of semiconductor devices. His innovative mindset and technical expertise have led him to file numerous patents that address critical challenges in the industry.

Collaborations: Throughout his career, Jian-Shin Tsai has collaborated with esteemed colleagues, including Min-Hui Lin and Chao-Ching Chang. These partnerships have fortified his research efforts and allowed for the exchange of ideas that drive technological advancements.

Conclusion: Jian-Shin Tsai stands out as a significant figure in the semiconductor industry, whose inventions have the potential to shape the future of electronic devices. His commitment to innovation and excellence continues to propel advancements in semiconductor technology, making him a notable inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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