The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
May. 17, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Yi Wu, Taichung, TW;
Chun-Chih Lin, Taipei, TW;
Jian-Shin Tsai, Tainan, TW;
Min-Hui Lin, Chali Township, TW;
Wen-Shan Chang, Tainan, TW;
Yi-Ming Lin, Tainan, TW;
Chao-Ching Chang, Kaohsiung, TW;
C. H. Chen, Hsinchu, TW;
Chin-Szu Lee, Taoyuan, TW;
Y. T. Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.