The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Sep. 17, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Yi Wu, Taichung, TW;
Jian-Shin Tsai, Tainan, TW;
Kuo-Hsien Cheng, Tainan, TW;
Min-Hui Lin, Tainan, TW;
Wei-Li Chen, Tainan, TW;
Chao-Ching Chang, Kaohsiung, TW;
Chung-Yu Hsieh, Tainan, TW;
Chin-Szu Lee, Taoyuan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/5252 (2013.01);
Abstract
A memory cell includes a selector, a fuse connected to the selector in series, a contact etch stop layer formed on the selector and the fuse, a bit line connected to the fuse, and a word line connected to the selector. The contact etch stop layer includes a high-k dielectric for improving the ability of capturing the electrons, thus the retention time of the memory cell is increased.