The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Jun. 15, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Han Lin, Tainan, TW;
Han-Sheng Weng, Tainan, TW;
Chao-Ching Chang, Kaohsiung, TW;
Jian-Shin Tsai, Tainan, TW;
Yi-Ming Lin, Tainan, TW;
Min-Hui Lin, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/469 (2006.01); H01L 23/12 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/02274 (2013.01); H01L 21/76832 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/535 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 23/53261 (2013.01); H01L 23/53295 (2013.01);
Abstract
A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).