Tainan, Taiwan

Han-Sheng Weng


Average Co-Inventor Count = 6.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2019-2021

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2 patents (USPTO):Explore Patents

Title: Han-Sheng Weng: Innovator in Semiconductor Technology

Introduction

Han-Sheng Weng is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to improving semiconductor structures.

Latest Patents

Weng's latest patents include a "Gap-fill method having improved gap-fill capability" and a "Semiconductor structure having etch stop layer and method of forming the same." The first patent describes a method for forming a semiconductor structure that involves patterning a semiconductor substrate to create adjacent semiconductor fins. It details the process of depositing a dielectric material and filling a trench with a flowable dielectric material to form an isolation structure. The second patent outlines a semiconductor structure that incorporates an etch stop layer made of nitrogen-and-oxygen-doped silicon carbide, enhancing the functionality of the semiconductor device.

Career Highlights

Han-Sheng Weng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on developing advanced semiconductor technologies that are crucial for modern electronic devices.

Collaborations

Weng collaborates with talented colleagues such as Wan-Yi Kao and Wei-Jin Li, contributing to a dynamic team that drives innovation in semiconductor research and development.

Conclusion

Han-Sheng Weng's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as a key innovator in the field. His advancements continue to influence the development of modern electronic devices.

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