The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Aug. 15, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Ching Chang, Kaohsiung, TW;
Sheng-Chan Li, Tainan, TW;
Wen-Jen Tsai, Tainan, TW;
Chih-Hui Huang, Tainan, TW;
Jian-Shin Tsai, Tainan, TW;
Cheng-Yi Wu, Taichung, TW;
Yi-Ming Lin, Tainan, TW;
Min-Hui Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a dielectric structure, a top metal layer and a bonding structure. The dielectric structure is disposed on the substrate. The top metal layer is disposed in the dielectric structure. The bonding structure is disposed on the dielectric structure and the top metal layer. The bonding structure includes a silicon oxide layer, a silicon oxy-nitride layer, a conductive bonding layer and a barrier layer. The silicon oxide layer is disposed on the dielectric structure. The silicon oxy-nitride layer covers the silicon oxide layer. The conductive bonding layer is disposed in the silicon oxide layer and the silicon oxy-nitride layer. The barrier layer covers a sidewall and a bottom of the conductive bonding layer.