The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Feb. 14, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Chung Chang, Tainan, TW;
Jung-Chih Tsao, Tainian, TW;
Chun Che Lin, Tainan, TW;
Yu-Ming Huang, Tainan, TW;
Tain-Shang Chang, Tainan, TW;
Jian-Shin Tsai, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile