The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Feb. 14, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chih-Chung Chang, Tainan, TW;
Jung-Chih Tsao, Tainian, TW;
Chun Che Lin, Tainan, TW;
Yu-Ming Huang, Tainan, TW;
Tain-Shang Chang, Tainan, TW;
Jian-Shin Tsai, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76846 (2013.01); H01L 21/76862 (2013.01); H01L 21/76856 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.