The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Mar. 30, 2012
Miao-cheng Liao, Yunlin, TW;
Jinn-kwei Liang, Yongkang, TW;
Wen-chieh Hsieh, Tainan, TW;
Shiu-ko Jangjian, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-lang Wang, Tien-Chung Village, TW;
Miao-Cheng Liao, Yunlin, TW;
Jinn-Kwei Liang, Yongkang, TW;
Wen-Chieh Hsieh, Tainan, TW;
Shiu-Ko JangJian, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.