The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 25, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, TW;
Min Hao Hong, Kaohsiung, TW;
You-Hua Chou, Hsin-Chu, TW;
Chih-Tsung Lee, Hsin-Chu, TW;
Shiu-Ko JangJian, Tainan, TW;
Miao-Cheng Liao, Yunlin, TW;
Hsiang-Hsiang Ko, Sinying, TW;
Chen-Ming Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods of making an integrated circuit are disclosed. An embodiment method includes etching a trench in a silicon substrate, depositing a first layer of isolation material in the trench, the first layer of isolation material projecting above surface of the silicon substrate, capping the first layer of isolation material by depositing a second layer of isolation material, the second layer of isolation material extending along at least a portion of sidewalls of the first layer of isolation material, epitaxially-growing a silicon layer upon the silicon substrate, the silicon layer horizontally adjacent to the second layer of isolation material, and forming a gate structure on the silicon layer, the gate structure defining a channel.