The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Nov. 01, 2007
Applicants:
Jung-chih Tsao, Tainan, TW;
Miao-cheng Liao, Yunlin, TW;
Phil Sun, Kaohsiung, TW;
Kei-wei Chen, Taipei, TW;
Inventors:
Jung-Chih Tsao, Tainan, TW;
Miao-Cheng Liao, Yunlin, TW;
Phil Sun, Kaohsiung, TW;
Kei-Wei Chen, Taipei, TW;
Assignee:
Taiwan Semiconductor Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.