The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Sep. 09, 2004
Applicants:
Yi-lung Cheng, Danshuei Township, Taipei County, TW;
Miao-cheng Liao, Yunlin Hsien, TW;
Ying-lang Wang, Longjing Township, Taichung County, TW;
Inventors:
Yi-Lung Cheng, Danshuei Township, Taipei County, TW;
Miao-Cheng Liao, Yunlin Hsien, TW;
Ying-Lang Wang, Longjing Township, Taichung County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/471 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.