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For the Inventor, By the Inventor

Tokyo, Japan

Masayoshi Shirahata

This inventor holds 17 USPTO granted patents. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp.. Active years: 1996-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masayoshi Shirahata. Retrieved from https://idiyas.com/inventor/masayoshi-shirahata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 82.4

Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 215(Granted Patents)


Location History:

  • Hyogo, JP (1996 - 2003)
  • Tokyo, JP (2000 - 2005)

Company Filing History:

goldMedal14 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal3 out of 3,781 
 
Renesas Technology Corp.
 patents

Years Active: 1996-2005

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17 patents (USPTO):Explore Patents
1. 6872628 - Method of manufacturing semiconductor device (2005-03-29),
2. 6737336 - Semiconductor device and manufacturing method therefor (2004-05-18),
3. 6686059 - Semiconductor device manufacturing method and semiconductor device (2004-02-03),
4. 6555887 - Semiconductor device with multi-layer interconnection (2003-04-29),
5. 6525380 - CMOS with a fixed charge in the gate dielectric (2003-02-25),
6. 6521963 - Semiconductor device and method of manufacturing semiconductor device (2003-02-18),
7. 6521517 - Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layer (2003-02-18),
8. 6461920 - Semiconductor device and method of manufacturing the same (2002-10-08),
9. 6417555 - Semiconductor device and manufacturing method therefor (2002-07-09),
10. 6335556 - Semiconductor device and method for manufacturing semiconductor device (2002-01-01),
11. 6333222 - Semiconductor device and manufacturing method thereof (2001-12-25),
12. 6248653 - Method of manufacturing gate structure (2001-06-19),
13. 6163046 - Semiconductor device and method of fabricating semiconductor device (2000-12-19),
14. 6144079 - Semiconductor device and method of manufacturing the same (2000-11-07),
15. 5683923 - Semiconductor memory device capable of electrically erasing and writing (1997-11-04),

Title: The Innovative Journey of Masayoshi Shirahata

Introduction: Masayoshi Shirahata is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masayoshi Shirahata holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Masayoshi Shirahata has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Masayoshi Shirahata has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Masayoshi Shirahata's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of the global tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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