The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Aug. 05, 1999
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 3/1119 ;
Abstract
A semiconductor device with a polycide interconnection including a refractory metal silicide film improved in adherence with an interlayer insulation film, and a method of fabricating such a semiconductor device are provided. The local impurity concentration of a tungsten silicide film in the proximity of the interface between an interlayer oxide film and the tungsten silicide film is set to 5×10 atms/cm -2×10 atms/cm .