The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Mar. 29, 2000
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/13205 ;
Abstract
A method of manufacturing a gate structure is provided which enables to obtain a gate structure of a low resistance without increasing the height of the gate electrode, and therefore to suppress its height, by performing etching using a vapor phase hydrofluoric acid, thereby to selectively remove a TEOS oxide film (,) containing impurity at a predetermined concentration; and forming a metal film in the region surrounded by a TEOS oxide film (,) and polysilicon (,).