Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layer

Abstract

A method of manufacturing a semiconductor device. The method includes forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, forming a first conductive layer on the gate insulating film, selectively forming a second conductive layer on the first conductive layer, and selectively imparting an insulating property to the first conductive layer by using the second conductive layer as a mask, to obtain an insulating layer. The method also includes forming a pair of source/drain regions of a second conductivity type opposite to the first conductivity type, so as to sandwich therebetween the surface of the semiconductor substrate underlying the first conductive layer left when the first conductive layer was imparted the insulating property.