The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jul. 20, 2000
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device. The method includes forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, forming a first conductive layer on the gate insulating film, selectively forming a second conductive layer on the first conductive layer, and selectively imparting an insulating property to the first conductive layer by using the second conductive layer as a mask, to obtain an insulating layer. The method also includes forming a pair of source/drain regions of a second conductivity type opposite to the first conductivity type, so as to sandwich therebetween the surface of the semiconductor substrate underlying the first conductive layer left when the first conductive layer was imparted the insulating property.