= 0.73 Inventors with similar research interests:
Location History:
- Otake, JP (1991)
- Aichi, JP (1999)
- Chiyoda-ku, JP (2010)
- Ikeda, JP (2011 - 2014)
- Kanagawa, JP (2013 - 2018)
- Hyogo, JP (1984 - 2019)
- Tokyo, JP (1984 - 2021)
- Tokushima, JP (1999 - 2021)
Company Filing History:
15 out of 7,524 
11 out of 8,776 
9 out of 21,351 
Years Active: 1984-2025
Title: Masao Inoue: Innovator in Semiconductor Technology
Introduction
Masao Inoue is a renowned inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 52 patents, Inoue's innovations have paved the way for advancements in memory cells and semiconductor devices.
Latest Patents
One of Inoue's latest inventions is a semiconductor device featuring a non-volatile memory cell. This innovative memory cell includes a gate insulating film with a charge storage layer that can retain charge. The construction of the device involves a memory gate electrode positioned on the gate insulating film. Notably, the charge storage layer comprises a first insulating film containing hafnium and silicon paired with a second insulating film, where the concentrations of hafnium differ between the two layers. Additionally, the first insulating film has a larger bandgap than that of the second insulating film.
Another significant patent focuses on the method for manufacturing a semiconductor device that enhances the performance of memory elements. This method outlines the formation of a gate electrode over a semiconductor substrate, which is insulated by an overall insulation film comprising multiple insulating films. The combination of these films, particularly the second insulation film with charge accumulation functions, contributes to improved semiconductor device performance.
Career Highlights
Inoue has held esteemed positions at leading companies in the electronics industry. He has worked with Renesas Electronics Corporation and Sanyo Electric Co., Ltd., where he applied his expertise in semiconductor technology to develop cutting-edge solutions that have greatly influenced the market.
Collaborations
During his career, Masao Inoue has collaborated with notable professionals such as Jiro Yugami and Masaharu Mizutani. These partnerships have been pivotal in driving forward their shared vision of innovation in semiconductor technology.
Conclusion
Masao Inoue's contributions to the field of semiconductor devices have demonstrated his capability as an inventor dedicated to pushing the boundaries of technology. With a solid foundation of patents illustrating his innovative prowess, Inoue continues to influence the evolution of memory cell technology and semiconductor manufacturing methods.
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