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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11094833 B1

PDFFull Text
Date of Patent:
Aug. 17, 2021

Filed:

Jun. 25, 2019

Semiconductor device including memory using hafnium and a method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Masao Inoue, Tokyo, JP;

Masaru Kadoshima, Tokyo, JP;

Yoshiyuki Kawashima, Tokyo, JP;

Ichiro Yamakawa, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/02148 (2013.01); H01L 21/02178 (2013.01); H01L 21/02356 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/42364 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66833 (2013.01);
Abstract

A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.

Find Patent Forward Citations

Inoue, Masao. (2021). Semiconductor device including memory using hafnium and a method of manufacturing the same (U.S. Patent No. 11094833). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11094833

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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