The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
May. 14, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Masao Inoue, Kanagawa, JP;
Yoshiki Maruyama, Kanagawa, JP;
Tomoya Saito, Kanagawa, JP;
Atsushi Yoshitomi, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
An improvement is achieved in the performance of a semiconductor device including a memory element. Over a semiconductor substrate, a gate electrode for the memory element is formed via an insulating film as a gate insulating film for the memory element. The insulating film includes first, second, third, fourth, and fifth insulating films in order of being apart from the substrate. The second insulating film has a charge storing function. The band gap of each of the first and third insulating films is larger than a band gap of the second insulating film. The band gap of the fourth insulating film is smaller than the band gap of the third insulating film. The band gap of the fifth insulating film is smaller than the band gap of the fourth insulating film.