The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jul. 18, 2013
Renesas Electronics Corporation, Kanagawa, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Jiro Yugami, Yokohama, JP;
Masao Inoue, Ikeda, JP;
Masaharu Mizutani, Itami, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Disclosed is a semiconductor device including a first MISFET of an n channel type and a second MISFET of a p channel type, each of the MISFETs being configured with a gate insulating film featuring a silicon oxide film or a silicon oxynitride film and a gate electrode including a conductive silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film in both the first and second MISFETs such that metal atoms with a surface density of 1×10to 5×10atoms/cmare contained near the interface and each of the first and second MISFETs having a channel region containing an impurity the concentration of which is equal to or lower than 1.2×10/cm.